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Lecturer(s)
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Střižík Lukáš, Ing. Ph.D.
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Course content
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1. Band model of amorphous and crystalline semiconductors. 2. Defects in solids. 3. Effect of impurities on electrical and optical properties, PN junction. 4. Polycrystalline and single crystalline Si: Manufacturing. 5. Cleaning of silicon wafers. 6. Oxidation. 7. Ion implantation. 8. Diffusion. 9. Epitaxial growth of Si, chemical deposition of dielectric films. 10. Photolitography, wet and dry processes of films shaping. 11. Physical deposition of metal films. 12. Amorphous silicon, properties and applications. 13. III-V and II-VI semiconductors.
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Learning activities and teaching methods
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unspecified
- Participation in classes
- 39 hours per semester
- Preparation for a final test
- 60 hours per semester
- Preparation for an exam
- 72 hours per semester
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Learning outcomes
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Prerequisites
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Basic knowledge of inorganic and organic chemistry.
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Assessment methods and criteria
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Oral examination, Written examination
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Recommended literature
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přednášky předmětu.
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J. Valíček. Průvodce po křemíkové technologii.. Rožnov P/R., 2000.
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S.O. Kasap, P. Capper. Springer Handbook of Electronic and Photonic Materials. Springer Science+Business Media, Inc., USA, 2006.
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